unisonic technologies co., ltd uf3205 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2009 unisonic technologies co., ltd qw-r502-304.a hexfet power mosfet ? description the utc uf3205 uses advanced technology to provide excellent r ds(on) , fast switching, low gate charge, and extremely efficient. this device is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts. ? features * r ds(on) < 8m ? @ v gs =10v * ultra low gate charge ( 146nc max ) * low reverse transfer capacitance ( c rss = typ. 211 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UF3205L-TA3-T uf3205g-ta3-t to-220 g d s tube
uf3205 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-304.a ? absolute maximum ratings parameter symbol ratings unit gate-source voltage v gss 20 v continuous (v gs =10v) i d 110 drain current pulsed (note 2) i dm 390 a avalanche current (note 2) i ar 62 a repetitive(note 2) e ar 20 avalanche energy single pulsed(note 3) e as 1050 mj power dissipation ( t c =25c ) p d 200 w junction temperature t j +175 c storage temperature t stg -55 ~ +175 c note: 1. 2. 3. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) t j =25c, l=138 h, r g =25 ? , i as =62a ? thermal data parameter symbol min typ max unit junction to ambient ja 62 c/w junction to case jc 0.75 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250 a 55 v drain-source leakage current i dss v ds =55v,v gs =0v 25 a gate-source leakage current i gss v gs =20v, v ds =0v 100 na breakdown voltage temperature coefficient b v dss / t j reference to 25c, i d =1ma 0.057 v/c on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 2.0 4.0 v static drain-source on-resistance (note) r ds(on) v gs =10v, i d =62a 8.0 m ? dynamic parameters input capacitance c iss 3247 pf output capacitance c oss 781 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1mhz 211 pf switching parameters total gate charge q g 146 nc gate source charge q gs 35 nc gate drain charge q gd v ds =44v, i d =62a, v gs =10v 54 nc turn-on delay time t d(on) 14 ns turn-on rise time t r 101 ns turn-off delay time t d(off) 50 ns turn-off fall-time t f v dd =28v, i d =62a, r g =4.5 ? , v gs =10v (note) 65 ns internal drain inductance l d 4.5 nh internal source inductance l s 7.5 nh source- drain diode ratings and characteristics diode forward voltage v sd i s =62a ,v gs =0v 1.3 v maximum continuous drain-source diode forward current i s 110 a maximum pulsed drain-source diode forward current i sm 390 a body diode reverse recovery time t rr 69 104 ns body diode reverse recovery charge q rr i f =62a, di/dt=100a/ s (note) 143 215 nc note: pulse width 400 s; duty cycle 2%.
uf3205 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-304.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + fig. 1a peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period fig. 1b peak diode recovery dv/dt waveforms
uf3205 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-304.a ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f 2a switching test circuit 2b switching waveforms v d charge q gs q gd q g v gs 3a gate charge test circuit 3b gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) 4a unclamped inductive switching test circuit 4 b unclamped inductive switching waveforms
uf3205 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-304.a ? typical characteristics drain current vs. drain-source breakdown voltage 0 drain current, i d (a) drain-source breakdown voltage, bv dss (v) 0.5 0 0 50 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 100 150 200 250 300 50 100 150 200 250 300 10 20 30 1.0 1.5 2.0 40 0 50 60 70 2.5 3.0 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) 0 drain current, i d (a) 0.2 0 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (mv) 0 4 8 0.4 0.6 0.8 1.0 2 4 6 8 10 12 50 100 150 200 12 16 20 utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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